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2026-07-07 furnace ellipso

Objective

Measure the thickness of SiO2SiO_2 grown on a silicon sample (with native oxide) in our tube furnace at 1100∘C1100^{\circ}\text{C}

Process

  1. Wafer: Si, 4-inch, p-type, 100

  2. Cleave wafer into 2cm x 1cm samples

  3. Preheat tube furnace to 1100∘C1100^{\circ}\text{C}

  4. Place sample inside for t minutes, t ranging from 5 to 45 in increments of 5

  5. Measure thermal oxide thickness using Woollam Ellipsometer @ IITNF

Plot

Data

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